EC8252 Electronic Devices Syllabus Notes Question Paper Question Banks Anna University - Regulation 2017 2nd Semester Notes CBCS
Anna University Electronic Devices Syllabus Notes Question Bank Question Papers
Anna University EC8252 Electronic Devices Notes are provided below. EC8252 Notes all 5 units notes are uploaded here. here EC8252 Electronic Devices notes download link is provided and students can download the EC8252 Lecture Notes and can make use of it.
EC8252 Electronic Devices Syllabus Regulation 2017
UNIT I SEMICONDUCTOR DIODE
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC - Hybrid -Ï€ model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC - Hybrid -Ï€ model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.
Click below link to download Electronic Devices Syllabus Notes Question papers Question Banks 2 marks with answers Part B Questions with answers download.
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EC8252 Electronic Devices Anna university 2nd semester Regulation 2017 notes
EC8252 Electronic Devices Notes Syllabus
EC8252 Electronic Devices Notes
EC8252 Electronic Devices Syllabus
EC8252 Electronic Devices Question papers
EC8252 Electronic Devices Question Bank
